Browsing by Author Zhong, Hong-xia

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Issue DateTitleAuthor(s)
20-Apr-20222D Graphene-Like Pb-Free Perovskite Semiconductor CsSb(Br1-xIx)(4) with Quasi-linear Electronic Dispersion and Direct Bandgap Close to GermaniumGuo, Wen-hui; Zhong, Hong-xia; Zhang, Min; Du, Juan; Liu, Shi-ming; He, Yong; Zhu, Yao-hui; Wang, Xinqiang; Shi, Jun-jie
15-Aug-2023Anomalous high ZT above 2.2 in light element dominated compound Li4OTe due to low thermal conductivityLiu, Shi-ming; Zhong, Hong-xia; Zhu, Yao-hui; Guo, Wen-hui; He, Yong; Tian, Chong; Wang, Xinqiang; Shi, Jun-jie
2016Anomalous Light Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge MicrostructureHuang, Pu; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Zhong, Hong-xia; Ding, Yi-min; Cao, Xiong; Wu, Meng; Lut, Jing
Sep-2022Anti-perovskite carbides Ca6CSe4 and Sr6CSe4 for photovoltaics with similar optoelectronic properties to MAPbI(3)Guo, Wen-hui; Zhong, Hong-xia; Du, Juan; Zhu, Yao-hui; Liu, Shi-ming; He, Yong; Tian, Chong; Zhang, Min; Wang, Xinqiang; Shi, Jun-jie
2013Band Edge Modulation and Light Emission in InGaN Nanowires Due to the Surface State and Microscopic Indium DistributionZhou, Tie-cheng; Shi, Jun-jie; Zhang, Min; Yang, Mao; Zhong, Hong-xia; Jiang, Xin-he; Huang, Pu
2016Band Gap Opening of Graphene by Forming Heterojunctions with the 2D Carbonitrides Nitrogenated Holey Graphene, g-C3N4, and g-CN: Electric Field EffectCao, Xiong; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Zhong, Hong-xia; Huang, Pu; Ding, Yi-min; Wu, Meng
2016Breakthrough of the p-type doping bottleneck in ZnO by inserting an ultrathin ZnX (X = S, Se and Te) layer doped with N-X or Ag-ZnJiang, Xin-he; Shi, Jun-jie; Zhang, Min; Zhong, Hong-xia; Huang, Pu; Ding, Yi-min; Cao, Xiong; Wu, Meng; Liao, Zhi-min
27-Dec-2021Cerium-based lead-free chalcogenide perovskites for photovoltaicsDu, Juan; Shi, Jun-jie; Guo, Wen-hui; Liu, Shi-ming; He, Yong; Tian, Chong; Zhu, Yao-hui; Zhong, Hong-xia
Jul-2021The Dion-Jacobson perovskite CsSbCl4: a promising Pb-free solar-cell absorber with optimal bandgap similar to 1.4 eV, strong optical absorption similar to 10(5) cm(-1), and large power-conversion efficiency above 20%Guo, Wen-hui; Zhu, Yao-hui; Zhang, Min; Du, Juan; Cen, Yu-lang; Liu, Shi-ming; He, Yong; Zhong, Hong-xia; Wang, Xinqiang; Shi, Jun-jie
2014Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)(m)/(GaN)(n) (m > n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulationJiang, Xin-he; Shi, Jun-jie; Zhang, Min; Zhong, Hong-xia; Huang, Pu; Ding, Yi-min; Yu, Tong-jun; Shen, Bo; Lu, Jing; Wang, Xihua
2023Few-Hydrogen Metal-Bonded Perovskite Superconductor MgHCu<sub>3</sub> with a Critical Temperature of 42 K under Atmospheric PressureTian, Chong; He, Yong; Zhu, Yao-hui; Du, Juan; Liu, Shi-ming; Guo, Wen-hui; Zhong, Hong-xia; Lu, Jing; Wang, Xinqiang; Shi, Jun-jie
2023Few-Hydrogen Metal-Bonded Perovskite Superconductor MgHCu<sub>3</sub> with a Critical Temperature of 42 K under Atmospheric PressureTian, Chong; He, Yong; Zhu, Yao-hui; Du, Juan; Liu, Shi-ming; Guo, Wen-hui; Zhong, Hong-xia; Lu, Jing; Wang, Xinqiang; Shi, Jun-jie
Dec-2021High hydrogen production in the InSe/MoSi2N4 van der Waals heterostructure for overall water splittingHe, Yong; Zhu, Yao-hui; Zhang, Min; Du, Juan; Guo, Wen-hui; Liu, Shi-ming; Tian, Chong; Zhong, Hong-xia; Wang, Xinqiang; Shi, Jun-jie
2016Improvement of n-type conductivity in hexagonal boron nitride monolayers by doping, strain and adsorptionDing, Yi-min; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Zhong, Hong-xia; Huang, Pu; Wu, Meng; Cao, Xiong
2016Improvement of p-type conductivity in Al-rich AlGaN substituted by Mg-Ga delta-doping (AlN)(m)/(GaN)(n) (m &gt;= n) superlatticeJiang, Xin-he; Shi, Jun-jie; Zhang, Min; Zhong, Hong-xia; Huang, Pu; Ding, Yi-min; Wu, Meng; Cao, Xiong; Rong, Xin; Wang, Xinqiang
2015Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)(5)/(GaN)(1) superlattice with Mg-Ga-O-N delta-codoping: Role of O-atom in GaN monolayerZhong, Hong-xia; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Huang, Pu; Ding, Yi-min
20-Oct-2021Layered Dion-Jacobson-Type Chalcogenide Perovskite CsLaM2X7 (M = Ta/Nb; X = S/Se) with a Narrow Band Gap of similar to 1 eV as a Promising Rear Cell for All-Perovskite Tandem Solar CellsZhong, Hong-xia; Liu, Shi-ming; Cen, Yu-lang; Zhang, Min; Zhu, Yao-hui; Du, Juan; He, Yong; Guo, Wen-hui; Wang, Xin-qiang; Shi, Jun-jie
Apr-2022Lead-free layered Aurivillius-type Sn-based halide perovskite Ba2X2[Csn-1SnnX3n+1] (X = I/Br/Cl) with an optimal band gap of similar to 1.26 eV and theoretical efficiency beyond 27% for photovoltaicsLiu, Shi-ming; Zhong, Hong-xia; Liang, Jun-jie; Zhang, Min; Zhu, Yao-hui; Du, Juan; Guo, Wen-hui; He, Yong; Wang, Xinqiang; Shi, Jun-jie
2017Modulation of electronic and optical properties of ZnO by inserting an ultrathin ZnX (X = S, Se and Te) layer to form short-period (ZnO)(5)/(ZnX)(1) superlatticeJiang, Xin-he; Shi, Jun-jie; Zhang, Min; Zhong, Hong-xia; Huang, Pu; Ding, Yi-min; Cao, Xiong; Wu, Meng
2015Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and DefectHuang, Pu; Zong, Hua; Shi, Jun-jie; Zhang, Min; Jiang, Xin-he; Zhong, Hong-xia; Ding, Yi-min; He, Ying-ping; Lu, Jing; Hu, Xiao-dong