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| Issue Date | Title | Author(s) |
| 2019 | Anisotropic dependence of light extraction behavior on propagation path in AlGaN-based deep-ultraviolet light-emitting diodes | Wang, H.; Fu, L.; Lu, H. M.; Kang, X. N.; Wu, J. J.; Xu, F. J.; Yu, T. J. |
| 2010 | Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction | Ma, N.; Wang, X. Q.; Xu, F. J.; Tang, N.; Shen, B.; Ishitani, Y.; Yoshikawa, A. |
| 2011 | Anomalous linear photogalvanic effect observed in a GaN-based two-dimensional electron gas | Peng, X. Y.; Zhang, Q.; Shen, B.; Shi, J. R.; Yin, C. M.; He, X. W.; Xu, F. J.; Wang, X. Q.; Tang, N.; Jiang, C. Y.; Chen, Y. H.; Chang, K. |
| 2012 | Boundary-enhanced momentum relaxation of longitudinal optical phonons in GaN | Ma, N.; Shen, B.; Lu, L. W.; Xu, F. J.; Guo, L.; Wang, X. Q.; Lin, F.; Feng, Z. H.; Dun, S. B.; Liu, B. |
| Feb-2021 | Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes | Lang, J.; Xu, F. J.; Sun, Y. H.; Zhang, N.; Wang, J. M.; Liu, B. Y.; Wang, L. B.; Xie, N.; Fang, X. Z.; Kang, X. N.; Qin, Z. X.; Yang, X. L.; Wang, X. Q.; Ge, W. K.; Shen, B. |
| 2009 | Characterizations of GaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by MOCVD | Shen, X. Q.; Shimizu, M.; Okumura, H.; Xu, F. J.; Shen, B.; Zhang, G. Y. |
| 2007 | Circular photogalvanic effect of the two-dimensional electron gas in AlXGa1-XN/GaN heterostructures under uniaxial strain | He, X. W.; Shen, B.; Tang, Y. Q.; Tang, N.; Yin, C. M.; Xu, F. J.; Yang, Z. J.; Zhang, G. Y.; Chen, Y. H.; Tang, C. G.; Wang, Z. G. |
| 2009 | Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates | Shen, X. Q.; Shimizu, M.; Okumura, H.; Xu, F. J.; Shen, B.; Zhang, G. Y. |
| 26-May-2020 | Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission | Sun, Y. H.; Xu, F. J.; Xie, N.; Wang, J. M.; Zhang, N.; Lang, J.; Liu, B. Y.; Fang, X. Z.; Wang, L. B.; Ge, W. K.; Kang, X. N.; Qin, Z. X.; Yang, X. L.; Wang, X. Q.; Shen, B. |
| 2018 | Crystal quality evolution of AlN films via high-temperature annealing under ambient N-2 conditions | Wang, M. X.; Xu, F. J.; Xie, N.; Sun, Y. H.; Liu, B. Y.; Qin, Z. X.; Wang, X. Q.; Shen, B. |
| 2007 | Current transport mechanism of Au/Ni/GaN Schottky diodes at high temperatures | Huang, S.; Shen, B.; Wang, M. J.; Xu, F. J.; Wang, Y.; Yang, H. Y.; Lin, F.; Lu, L.; Chen, Z. P.; Qin, Z. X.; Yang, Z. J.; Zhang, G. Y. |
| 2010 | Current-controlled negative differential resistance effect induced by Gunn-type instability in n-type GaN epilayers | Ma, N.; Shen, B.; Xu, F. J.; Lu, L. W.; Feng, Z. H.; Zhang, Z. G.; Dun, S. B.; Wen, C. P.; Wang, J. Y.; Lin, F.; Zhang, D. T.; Sun, M. |
| 2011 | Deep donor state in InN: Temperature-dependent electron transport in the electron accumulation layers and its influence on Hall-effect measurements | Ma, N.; Wang, X. Q.; Liu, S. T.; Feng, L.; Chen, G.; Xu, F. J.; Tang, N.; Lu, L. W.; Shen, B. |
| 2010 | Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films | Xu, F. J.; Shen, B.; Lu, L.; Miao, Z. L.; Song, J.; Yang, Z. J.; Zhang, G. Y.; Hao, X. P.; Wang, B. Y.; Shen, X. Q.; Okumura, H. |
| 2012 | Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers | Huang, C. C.; Xu, F. J.; Song, J.; Xu, Z. Y.; Wang, J. M.; Zhu, R.; Chen, G.; Wang, X. Q.; Yang, Z. J.; Shen, B.; Chen, X. S.; Lu, W. |
| 2009 | Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation | Wang, M. J.; Yuan, L.; Chen, K. J.; Xu, F. J.; Shen, B. |
| 2013 | Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells | Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Sang, L. W.; Xu, F. J.; Tang, N.; Qin, Z. X.; Sumiya, M.; Chen, Y. H.; Ge, W. K.; Shen, B. |
| 2007 | Effects of the passivation of SiNx with various growth stoichiometry on the high temperature transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures | Wang, M. J.; Shen, B.; Xu, F. J.; Wang, Y.; Xu, J.; Huang, S.; Yang, Z. J.; Qin, Z. X.; Zhang, G. Y. |
| 2016 | Electrical properties of GaN-based heterostructures adopting InAlN/AlGaN bilayer barriers | Xu, Z. Y.; Xu, F. J.; Huang, C. C.; Wang, J. M.; Zhang, X.; Yang, Z. J.; Wang, X. Q.; Shen, B. |
| 2015 | Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temperature alternation technique | Zhang, X.; Xu, F. J.; Wang, J. M.; He, C. G.; Zhang, L. S.; Huang, J.; Cheng, J. P.; Qin, Z. X.; Yang, X. L.; Tang, N.; Wang, X. Q.; Shen, B. |
