Showing results 1 to 20 of 53
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| Issue Date | Title | Author(s) |
| 19-Jun-2023 | 1/f noise of short-channel indium tin oxide transistors under stress | Gu, Chengru; Hu, Qianlan; Li, Qijun; Zhu, Shenwu; Kang, Jiyang; Wu, Yanqing |
| 2020 | 10-nm Channel Length Indium-Tin-Oxide transistors with I-on=1860 mu A/mu m, G(m)=1050 mu S/mu m at V-ds=1 V with BEOL Compatibility | Li, Shengman; Gu, Chengru; Li, Xuefei; Huang, Ru; Wu, Yanqing |
| 11-Jun-2020 | Achieving blood pressure control targets in hypertensive patients of rural China - a pilot randomized trial | Huang, Xiao; Liu, Lishun; Song, Yun; Gao, Lan; Zhao, Min; Bao, Huihui; Qin, Xianhui; Wu, Yanqing; Wu, Qinghua; Bi, Chonglei; Yue, Aiping; Fang, Chongqian; Ma, Hai; Cui, Yimin; Tang, Genfu; Li, Ping; Zhang, Yan; Li, Jianping; Wang, Binyan; Xu, Xiping; Wang, Hong; Parati, Gianfranco; Spence, J. David; Wang, Xiaobin; Huo, Yong; Chen, Guangliang; Cheng, Xiaoshu |
| Jul-2020 | An ambipolar homojunction with options | Wu, Yanqing |
| 2019 | Annealing effect and leakage current transport mechanisms of high k ternary GdAlOx gate dielectrics | Li, Shuan; Wu, Yanqing; Yu, Hongen; Fu, Kai; Zheng, Jie; Li, Xingguo; Tian, Wenhuai |
| 2019 | Association Between Lipid Profiles and Arterial Stiffness in Chinese Patients With Hypertension: Insights From the CSPPT | Zhan, Biming; Huang, Xiao; Wang, Jiancheng; Qin, Xianhui; Zhang, Jingping; Cao, Jingjing; Song, Yun; Liu, Lishun; Li, Ping; Yang, Renqiang; Wu, Yanqing; Wu, Qinghua; Zhang, Yan; Li, Jianping; Huo, Yong; Wang, Binyan; Xu, Xiping; Bao, Huihui; Cheng, Xiaoshu |
| 2019 | Associations between resting heart rate, hypertension, and stroke: A population-based cross-sectional study | Hu, Lihua; Huang, Xiao; Zhou, Wei; You, Chunjiao; Liang, Qian; Zhou, Di; Li, Juxiang; Li, Ping; Wu, Yanqing; Wu, Qinghua; Wang, Zengwu; Gao, Runlin; Bao, Huihui; Cheng, Xiaoshu |
| 2022 | BEOL-Compatible High-Performance a-IGZO Transistors with Record high I-ds,I- max=1207 mu A/mu m and on-off ratio exceeding 10(11) at V-ds=1V | Li, Qijun; Gu, Chengru; Zhu, Shenwu; Hu, Qianlan; Zhao, Wenjie; Li, Xuefei; Huang, Ru; Wu, Yanqing |
| 24-Oct-2023 | Comparison of Outcomes in Patients With Type-0 Bicuspid Aortic Stenosis Undergoing Transcatheter Aortic Valve Replacement With Self-Expanding Valves vs Balloon-Expandable Valves | Feng, Dejing; Wu, Yongjian; Wang, Moyang; Xu, Haiyan; Wei, Lai; Liu, Xianbao; Zhang, Junjie; Qiu, Chunguang; Zhu, Dan; Fang, Zhenfei; Luo, Jianfang; Tang, Yida; Wang, Yan; Jiang, Xiaofei; Liu, Yuhao; Ma, Xiang; Xu, Kai; Yang, Yining; Zhang, Haibo; Jia, Guoli; Yuan, Yiqiang; Zhou Yujie; Chen, Shenglong; Dai, Min; Guo, Yingqiang; Han, Ke; Li, Gang; Liu, Jie; Wang, Sheng; Wu, Leiming; Wu, Yanqing; Xu, Li; Zhang, Qi; Wang, Jianan |
| Dec-2021 | Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory | Ma, Xiaolei; Liu, Yue-Yang; Zeng, Lang; Chen, Jiezhi; Wang, Runsheng; Wang, Lin-Wang; Wu, Yanqing; Jiang, Xiangwei |
| 2021 | Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with I-on>700 mu A/mu m and MoS2/WSe2 CFET | Xiong, Xiong; Tong, Anyu; Wang, Xin; Liu, Shiyuan; Li, Xuefei; Huang, Ru; Wu, Yanqing |
| 2019 | Effect of Fe impurity on performance of La2O3 as a high k gate dielectric | Li, Shuan; Lin, Youyu; Wu, Yanqing; Guo, Yanru; Yu, Hongen; Miao, Ruiying; Wang, Zhiqiang; Tian, Wenhuai; Li, Xingguo |
| 3-Mar-2020 | Fibroblast Growth Factor 1 Ameliorates Diabetes-Induced Liver Injury by Reducing Cellular Stress and Restoring Autophagy | Xu, Zeping; Wu, Yanqing; Wang, Fan; Li, Xiaofeng; Wang, Ping; Li, Yuying; Wu, Junnan; Li, Yiyang; Jiang, Ting; Pan, Xindian; Zhang, Xie; Xie, Longteng; Xiao, Jian; Liu, Yanlong |
| 18-Mar-2022 | Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus | Xiong, Xiong; Wang, Xin; Hu, Qianlan; Li, Xuefei; Wu, Yanqing |
| 15-Aug-2021 | High-efficiency generation of narrowband soft x rays from carbon nanotube foams irradiated by relativistic femtosecond lasers | Shou, Yinren; Wang, Dahui; Wang, Pengjie; Liu, Jianbo; Cao, Zhengxuan; Mei, Zhusong; Xu, Shirui; Pan, Zhuo; Kong, Defeng; Qi, Guijun; Liu, Zhipeng; Liang, Yulan; Peng, Ziyang; Gao, Ying; Chen, Shiyou; Zhao, Jiarui; Zhao, Yanying; Xu, Han; Zhao, Jun; Wu, Yanqing; Yan, Xueqing; Ma, Wenjun |
| 2022 | High-Performance Bilayer WSe2 pFET with Record I-ds=425 mu A/mu m and G(m)=100 mu S/mu m at V-ds =-1 V By Direct Growth and Fabrication on SiO2 Substrate | Shi, Xinhang; Wang, Xin; Liu, Shiyuan; Guo, Qi; Sun, Lei; Li, Xuefei; Huang, Ru; Wu, Yanqing |
| 2022 | High-Performance Bilayer WSe2 pFET with Record I-ds=425 mu A/mu m and G(m)=100 mu S/mu m at V-ds =-1 V By Direct Growth and Fabrication on SiO2 Substrate | Shi, Xinhang; Wang, Xin; Liu, Shiyuan; Guo, Qi; Sun, Lei; Li, Xuefei; Huang, Ru; Wu, Yanqing |
| 1-Jul-2021 | High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2 | Wang, Xin; Shi, Xinhang; Gu, Chengru; Guo, Qi; Liu, Honggang; Li, Xuefei; Wu, Yanqing |
| 2019 | High-speed black phosphorus field-effect transistors approaching ballistic limit | Li, Xuefei; Yu, Zhuoqing; Xiong, Xiong; Li, Tiaoyang; Gao, Tingting; Wang, Runsheng; Huang, Ru; Wu, Yanqing |
| 12-Dec-2022 | High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel | Hu, Qianlan; Zhu, Shenwu; Gu, Chengru; Wu, Yanqing |
