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| Issue Date | Title | Author(s) |
| 2014 | Advantage of In- over N-polarity for disclosure of p-type conduction in InN:Mg | Dmowski, L. H.; Baj, M.; Wang, X. Q.; Zheng, X. T.; Ma, D. Y.; Konczewicz, L.; Suski, T. |
| 2007 | Airway fibroblasts isolated from mouse model of allergic asthma display distinct cellular and phenotypic characteristics as compared to normal fibroblasts | Berro, A. I.; Sugiura, H.; Liu, X.; Duan, F.; Kawasaki, S.; Togo, S.; Kamio, K.; Wang, X. Q.; Mao, L.; Ahn, Y.; Ertl, R. F.; Casale, T. B.; Rennard, S. I. |
| 2013 | Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy | Imai, D.; Ishitani, Y.; Fujiwara, M.; Wang, X. Q.; Kusakabe, K.; Yoshikawa, A. |
| 2010 | Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction | Ma, N.; Wang, X. Q.; Xu, F. J.; Tang, N.; Shen, B.; Ishitani, Y.; Yoshikawa, A. |
| 2011 | Anomalous linear photogalvanic effect observed in a GaN-based two-dimensional electron gas | Peng, X. Y.; Zhang, Q.; Shen, B.; Shi, J. R.; Yin, C. M.; He, X. W.; Xu, F. J.; Wang, X. Q.; Tang, N.; Jiang, C. Y.; Chen, Y. H.; Chang, K. |
| 2012 | Boundary-enhanced momentum relaxation of longitudinal optical phonons in GaN | Ma, N.; Shen, B.; Lu, L. W.; Xu, F. J.; Guo, L.; Wang, X. Q.; Lin, F.; Feng, Z. H.; Dun, S. B.; Liu, B. |
| Feb-2021 | Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes | Lang, J.; Xu, F. J.; Sun, Y. H.; Zhang, N.; Wang, J. M.; Liu, B. Y.; Wang, L. B.; Xie, N.; Fang, X. Z.; Kang, X. N.; Qin, Z. X.; Yang, X. L.; Wang, X. Q.; Ge, W. K.; Shen, B. |
| 15-Feb-2020 | Characteristics and prognostic factors among premenopausal versus postmenopausal patients with advanced endometrial cancer: a SEER-based analysis | Wang, X. Q.; Ma, S. Q.; Guo, J. Y.; Zhao, F.; Liang, X. H. |
| 2012 | Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities | Dmowski, L. H.; Baj, M.; Konczewicz, L.; Suski, T.; Maude, D. K.; Grzanka, S.; Wang, X. Q.; Yoshikawa, A. |
| 26-May-2020 | Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission | Sun, Y. H.; Xu, F. J.; Xie, N.; Wang, J. M.; Zhang, N.; Lang, J.; Liu, B. Y.; Fang, X. Z.; Wang, L. B.; Ge, W. K.; Kang, X. N.; Qin, Z. X.; Yang, X. L.; Wang, X. Q.; Shen, B. |
| 2018 | Crystal quality evolution of AlN films via high-temperature annealing under ambient N-2 conditions | Wang, M. X.; Xu, F. J.; Xie, N.; Sun, Y. H.; Liu, B. Y.; Qin, Z. X.; Wang, X. Q.; Shen, B. |
| 2011 | Deep donor state in InN: Temperature-dependent electron transport in the electron accumulation layers and its influence on Hall-effect measurements | Ma, N.; Wang, X. Q.; Liu, S. T.; Feng, L.; Chen, G.; Xu, F. J.; Tang, N.; Lu, L. W.; Shen, B. |
| 2012 | Detection of spin-orbit coupling of surface electron layer via reciprocal spin Hall effect in InN films | Mei, F. H.; Tang, N.; Wang, X. Q.; Duan, J. X.; Zhang, S.; Chen, Y. H.; Ge, W. K.; Shen, B. |
| 2012 | Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers | Huang, C. C.; Xu, F. J.; Song, J.; Xu, Z. Y.; Wang, J. M.; Zhu, R.; Chen, G.; Wang, X. Q.; Yang, Z. J.; Shen, B.; Chen, X. S.; Lu, W. |
| 2016 | Effect and safety of paroxetine for vasomotor symptoms: systematic review and meta-analysis | Wei, D.; Chen, Y.; Wu, C.; Wu, Q.; Yao, L.; Wang, Q.; Wang, X. Q.; Yang, K. H. |
| 2010 | Effect of GaN interlayer on polarity control of epitaxial ZnO thin films grown by molecular beam epitaxy | Wang, X. Q.; Sun, H. P.; Pan, X. Q. |
| 2010 | Effect of Mg doping on enhancement of terahertz emission from InN with different lattice polarities | Wang, X. Q.; Zhao, G. Z.; Zhang, Q.; Ishitani, Y.; Yoshikawa, A.; Shen, B. |
| 2013 | Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells | Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Sang, L. W.; Xu, F. J.; Tang, N.; Qin, Z. X.; Sumiya, M.; Chen, Y. H.; Ge, W. K.; Shen, B. |
| 2018 | Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells | Lymperakis, L.; Schulz, T.; Freysoldt, C.; Anikeeva, M.; Chen, Z.; Zheng, X.; Shen, B.; Cheze, C.; Siekacz, M.; Wang, X. Q.; Albrecht, M.; Neugebauer, J. |
| 2016 | Electrical properties of GaN-based heterostructures adopting InAlN/AlGaN bilayer barriers | Xu, Z. Y.; Xu, F. J.; Huang, C. C.; Wang, J. M.; Zhang, X.; Yang, Z. J.; Wang, X. Q.; Shen, B. |
