| Issue Date | Title | Author(s) |
| 2009 | 33 mu m free standing thick film vertical structure LED made by laser lift-off | Sun, Yongjian; Qi, Shengli; Chen, Zhizhong; Kang, Xingning; Zhu, Guangmin; Chen, Cheng; Li, Shitao; Pan, Yaobo; Yan, Jianfeng; Deng, Junjing; Long, Hao; Hao, Maosheng; Yu, Tongjun; Zhang, Guoyi |
| 2009 | 33 ��m free standing thick film vertical structure LED made by laser lift-off | Sun, Yongjian; Qi, Shengli; Chen, Zhizhong; Kang, Xingning; Zhu, Guangmin; Chen, Cheng; Li, Shitao; Pan, Yaobo; Yan, Jianfeng; Deng, Junjing; Long, Hao; Hao, Maosheng; Yu, Tongjun; Zhang, Guoyi |
| 8-Jun-2020 | Al diffusion at AlN/Si interface and its suppression through substrate nitridation | Wei, Lai; Yang, Xuelin; Shen, Jianfei; Liu, Danshuo; Cai, Zidong; Ma, Cheng; He, Xiaoguang; Tang, Jun; Qi, Shengli; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo |
| 2012 | Changing oblique angles of pyramid facets fabricated by wet etching of N polar GaN | Yu, Feng; Chen, Zhizhong; Qi, Shengli; Wang, Suyuan; Jiang, Shuang; Fu, Xingxing; Jiang, Xianzhe; Yu, Tongjun; Qin, Zhixin; Kang, Xiangning; Wu, Jiejun; Zhang, Guoyi |
| 2011 | Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate | Tian, Pengfei; Xie, Enyuan; Gong, Zheng; Chen, Zhizhong; Yu, Tongjun; Sun, Yongjian; Qi, Shengli; Chen, Yujie; Zhang, Yanfeng; Calvez, Stephane; Gu, Erdan; Zhang, Guoyi; Dawson, Martin D. |
| 2012 | Formation of low-resistance and thermally stable Ohmic contacts to laser lift-off prepared N-polar n-GaN | Deng, Junjing; Chen, Zhizhong; Wang, Suyuan; Yu, Feng; Qi, Shengli; Yu, Tongjun; Zhang, Guoyi |
| 2012 | Formation of low-resistance and thermally stable Ohmic contacts to laser lift-off prepared N-polar n-GaN | Deng, Junjing; Chen, Zhizhong; Wang, Suyuan; Yu, Feng; Qi, Shengli; Yu, Tongjun; Zhang, Guoyi |
| 2011 | GaN-based LEDs with a high light extraction composite surface structure fabricated by a modified YAG laser lift-off technology and the patterned sapphire substrates | Sun, Yongjian; Trieu, Simeon; Yu, Tongjun; Chen, Zhizhong; Qi, Shengli; Tian, Pengfei; Deng, Junjing; Jin, Xiaoming; Zhang, Guoyi |
| 2007 | Origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED | Chen, Zhizhong; Xu, Ke; Qin, Zhixin; Yu, Tongjun; Tong, Yuzhen; Song, Jinde; Lin, Liang; Liu, Peng; Qi, Shengli; Zhang, Guoyi |
| 2010 | Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs | Tian, Pengfei; Chen, Zhizhong; Sun, Yongjian; Qi, Shengli; Zhang, Huizhen; Deng, Junjing; Yu, Feng; Yu, Tongjun; Kang, Xiangning; Qin, Zhixin; Zhang, Guoyi |
| 2008 | Properties of GaN-based light-emitting diode thin film chips fabricated by laser lift-off and transferred to Cu | Sun, Yongjian; Yu, Tongjun; Chen, Zhizhong; Kang, Xiangning; Qi, Shengli; Li, Minggang; Lian, Guijun; Huang, Sen; Xie, Rongsi; Zhang, Guoyi |
