Browsing by Author Qi, Jingshan
Showing results 1 to 8 of 8
Issue Date | Title | Author(s) |
2013 | Bandgap engineering of rippled MoS2 monolayer under external electric field | Qi, Jingshan; Li, Xiao; Qian, Xiaofeng; Feng, Ji |
2015 | Giant and tunable valley degeneracy splitting in MoTe2 | Qi, Jingshan; Li, Xiao; Niu, Qian; Feng, Ji |
2016 | Graphene-based half-metal and spin-semiconductor for spintronic applications | Qi, Jingshan; Chen, Xiaofang; Hu, Kaige; Feng, Ji |
2018 | Magnetoconductivity of type-II Weyl semimetals | Wei, Yi-Wen; Li, Chao-Kai; Qi, Jingshan; Feng, Ji |
2016 | On the Quantum Spin Hall Gap of Monolayer 1T '-WTe2 | Zheng, Feipeng; Cai, Chaoyi; Ge, Shaofeng; Zhang, Xuefeng; Liu, Xin; Lu, Hong; Zhang, Yudao; Qiu, Jun; Taniguchi, Takashi; Watanabe, Kenji; Jia, Shuang; Qi, Jingshan; Chen, Jian-Hao; Sun, Dong; Feng, Ji |
2012 | Patterning of graphene | Feng, Ji; Li, Wenbin; Qian, Xiaofeng; Qi, Jingshan; Qi, Liang; Li, Ju |
2014 | Strain tuning of magnetism in Mn doped MoS2 monolayer | Qi, Jingshan; Li, Xiao; Chen, Xiaofang; Hu, Kaige |
2012 | Strain-Engineering of Band Gaps in Piezoelectric Boron Nitride Nanoribbons | Qi, Jingshan; Qian, Xiaofeng; Qi, Liang; Feng, Ji; Shi, Daning; Li, Ju |