Issue Date | Title | Author(s) |
2014 | 300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio | Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Yang, Zhen; Li, Xiaoping; Wang, Maojun; Yang, Zhenchuang; Xie, Bin; Yu, Min; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue |
2014 | Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress | Yang, Zhen; Wang, Jinyan; Xu, Zhe; Li, Xiaoping; Zhang, Bo; Wang, Maojun; Yu, Min; Zhang, Jincheng; Ma, Xiaohua; Li, Yongbing |
2014 | Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask | Xu, Zhe; Wang, Jinyan; Liu, Jingqian; Jin, Chunyan; Cai, Yong; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue |
2014 | Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio | Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Jin, Chunyan; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue |
2013 | Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique | Xu, Zhe; Wang, Jinyan; Liu, Yang; Cai, Jinbao; Liu, Jingqian; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng |
2014 | High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT | Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Yang, Zhen; Li, Xiaoping; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue |
2014 | Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs | Liu, Jingqian; Wang, Jinyan; Xu, Zhe; Jiang, Haisang; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue |
1-Feb-2021 | Investigation on mechanisms of current saturation in gateless AlGaN/GaN heterostructure device | Tao, Qianqian; Wang, Jinyan; Zhang, Bin; Wang, Xin; Li, Mengjun; Cao, Qirui; Wu, Wengang; Ma, Xiaohua |
2015 | Locally non-uniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure | Liu, Jingqian; Wang, Jinyan; Xu, Zhe; Jiang, Haisang; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue |
2014 | A novel method for measuring parasitic resistance in high electron mobility transistors | Yang, Zhen; Wang, Jinyan; Li, Xiaoping; Zhang, Bo; Zhao, Jian; Xu, Zhe; Wang, Maojun; Yu, Min; Yang, Zhenchuan; Wu, Wengang; Zhang, Yuming; Zhang, Jincheng; Ma, Xiaohua; Hao, Yue |
2009 | Synthesis and properties of NLO chromophores with fine-tuned gradient electronic structures | Ma, Xiaohua; Ma, Fei; Zhao, Zhenhua; Song, Naiheng; Zhang, Jianping |
2008 | Synthesis and properties of novel second-order NLO chromophores containing pyrrole as an auxiliary electron donor | Ma, Xiaohua; Liang, Ran; Yang, Fan; Zhao, Zhenhua; Zhang, Aixin; Song, Naiheng; Zhou, Qifeng; Zhang, Jianping |
2010 | Toward highly efficient NLO chromophores: Synthesis and properties of heterocycle-based electronically gradient dipolar NLO chromophores | Ma, Xiaohua; Ma, Fei; Zhao, Zhenhua; Song, Naiheng; Zhang, Jianping |
2011 | A Unique Stepped Multifunctionality of Perfluorinated Aryl Compound and Its Versatile Use in Synthesizing Grafted Polymers with Controlled Structures and Topologies | Zhao, Zhenhua; Ma, Xiaohua; Zhang, Aixin; Song, Naiheng |