Browsing by Author He, Hongyu

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Showing results 1 to 20 of 40  next >
Issue DateTitleAuthor(s)
20151/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold RegimeHe, Hongyu; Zheng, Xueren; Zhang, Shengdong
2015Above-Threshold 1/f Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance NoiseHe, Hongyu; Zheng, Xueren; Zhang, Shengdong
2012Analog/RF performance analysis of coaxial carbon nanotube MOSFET from non-equilibrium green's function simulationChe, Yuchi; He, Jin; Liang, Hailang; Chen, Qin; Wang, Cheng; He, Hongyu; Cao, Yu
2016Analysis of 1/f Noise for Polycrystalline Silicon TFTs Considering Mobility Power-Law ParameterHe, Hongyu; Liu, Yuan; Wang, Hao; Lin, Xinnan; Zheng, Xueren; Zhang, Shengdong
2020Analytical Drain Current and Capacitance Model for Amorphous InGaZnO TFTs Considering Temperature CharacteristicsHe, Hongyu; Xiong, Chao; Yin, Junli; Wang, Xinlin; Lin, Xinnan; Zhang, Shengdong
2017Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap StatesHe, Hongyu; Liu, Yuan; Yan, Binghui; Lin, Xinnan; Zheng, Xueren; Zhang, Shengdong
2016Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap StatesHe, Hongyu; Liu, Yuan; Yan, Binghui; Lin, Xinnan; Zheng, Xueren; Zhang, Shengdong
2012A charge based non-quasi-static transient model for SOI MOSFETsZhang, Jian; He, Jin; Ye, Yun; Cao, Yu; He, Hongyu; Chan, Mansun
2015Charge Trapping Model for Temporal Threshold Voltage Shift in a-IGZO TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate InsulatorWang, Lisa Ling; He, Hongyu; Liu, Xiang; Deng, Wei; Zhang, Shengdong
2013A Compact Diode Array Model for Phase Change Memory ApplicationSu, Yanmei; Ye, Yue; Wang, Cheng; He, Hongyu; Liang, Hailang; Wang, Hao; He, Jin
2013Compact modeling of parameter variations of nanoscale CMOS due to random dopant fluctuationYe, Yun; Zhu, Ying; He, Hongyu; Mei, Jinhe; Cao, Yu; He, Jin
2024Current Model for Organic Diodes at Different Temperatures: Comparison With Universal Curve EquationHe, Hongyu; Lin, Xinnan; Zhang, Shengdong
2017Drain Current Model Based on the Meyer-Neldel Rule for Polycrystalline ZnO Thin-Film Transistors at Different TemperaturesHe, Hongyu; Liu, Yuan; Yan, Binghui; Lin, Xinnan; Zheng, Xueren; Zhang, Shengdong
11-Apr-2024Drain Current Model for Antiambipolar Organic TFTs at Different TemperaturesHe, Hongyu; Lin, Xinnan; Zhang, Shengdong
2013The effects of elliptical gate cross section on carbon nanotube gate-all-around field effect transistorWang, Hao; Chang, Sheng; Wang, Cheng; Hu, Yue; He, Hongyu; He, Jin; He, Qingxing; Du, Caixia; Zhong, Shengju
Aug-2021Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTsHe, Hongyu; Liu, Yuan; Yin, Junli; Wang, Xinlin; Lin, Xinnan; Zhang, Shengdong
2013Logarithm Cofactor Difference Extrema Method of MOSFET's Post-Breakdown Current and Application to Parameter ExtractionShi, Min; He, Hongyu; Zhang, Guoan; Chen, Qin; Wang, Cheng; He, Jin; Chen, Aixin; Wu, Wen; Ye, Yun; Liang, Hailang; Cao, Yu; Zhang, Wei; Sun, Ling
2016Minimization of maximum lateness in an m-machine permutation flow shop with a general exponential learning effectHe, Hongyu
Nov-2020Modeling of Both Arrhenius and Non-Arrhenius Temperature-Dependent Drain Current for Organic Thin-Film TransistorsHe, Hongyu; Xiong, Chao; Yin, Junli; Wang, Xinlin; Lin, Xinnan; Zhang, Shengdong
2017Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film TransistorsZhang, Letao; Zhou, Xiaoliang; Yang, Huan; He, Hongyu; Wang, Longyan; Zhang, Min; Zhang, Shengdong
Showing results 1 to 20 of 40  next >